Unveiling the Principle of DRAM Storage Unit: How Does the Domestic 2T0C Architecture Break Through Traditional Bottlenecks

DRAM (Dynamic Random Access Memory) is the core component of memory modules, and the technological innovation of its storage unit architecture directly determines the performance ceiling of memory. For a long time, the global DRAM market has adopted the traditional 1T1C (1 transistor + 1 capacitor) architecture. However, the newly developed 2T0C architecture by domestic research teams has successfully broken through the physical limits of the traditional architecture, laying the foundation for the next-generation technological development of domestic memory modules.

The traditional 1T1C architecture is approaching its physical limits. As the manufacturing process shrinks below 10nm, the scaling space for storage capacitors becomes increasingly limited, leading to issues such as increased leakage rates and data interference, making it difficult to meet the demands for high-density, high-reliability storage in scenarios like AI and supercomputing. The 1T1C architecture requires regular data refresh (typically every 50ms), which not only consumes additional power but also affects the response speed of the memory. Although international giants have long had the idea of breaking through the 1T1C architecture, progress has been slow due to limitations in manufacturing technology.

The domestic 2T0C architecture has achieved a key breakthrough through original technology. This architecture adopts a "2-transistor + 0-capacitor" design, abandoning the traditional capacitor storage method and achieving data storage through the state changes of transistors. The core innovation lies in the application of in-situ metal self-oxidation technology, which realizes the self-aligned integration of read and write transistors, fundamentally solving the manufacturing challenges of the traditional 2T0C architecture. At the same time, this architecture introduces 4-bit multi-value storage technology, significantly enhancing storage density. Test data shows that the domestic 2T0C memory cell has a write time of only 50 nanoseconds, a data retention time exceeding 300 seconds, and thermal stability fully meeting industrial-grade standards.

The breakthrough in the 2T0C architecture holds significant importance for the domestic DRAM industry. This technology fills the technological void in related fields in China, enabling our country to stand on an equal footing with international giants in the next-generation DRAM race. If industrialized in the future, it will significantly enhance the storage density and energy efficiency ratio of domestic memory modules, reducing dependence on overseas DRAM technology. Currently, this technology has received support from the national key research and development plan, and is being promoted through collaborative efforts between industry, academia, and research. It is expected to achieve commercial application within 3-5 years.